| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that erroneous writing such as writing change of a value held by a memory cell at read-out occurs in conventional constitution consisting of six transistors in one memory cell, when an SRAM is produced in such a situation that transistor characteristics of a TFT, etc., are dispersed, or a power source is supplied from an RF circuit and a power source is not stabilized. <P>SOLUTION: In a memory cell of an SRAM, erroneous writing of the SRAM is prevented by separating a writing circuit and a readout circuit, so as to allow a stable operation. By considering write timing, the SRAM capable of more certainly performing writing operation without causing erroneous writing is provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
