发明名称 |
METHOD OF MANUFACTURING POWER DEVICE |
摘要 |
A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.
|
申请公布号 |
US2013034939(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
US201213550920 |
申请日期 |
2012.07.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;LEE JAE HOON;KIM KI SE;LEE JUNG HEE;IM KI SIK;KIM DONG SEOK |
发明人 |
LEE JAE HOON;KIM KI SE;LEE JUNG HEE;IM KI SIK;KIM DONG SEOK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|