| 摘要 |
[Problem] Provided are a measuring method and a measuring apparatus, whereby a temperature of a semiconductor layer can be directly and highly accurately detected at the time of depositing and film-forming the semiconductor layer. [Solution] First wavelength laser light having light transmissivity attenuate in a first temperature range (T3-T4) and second wavelength laser light having light transmissivity attenuate in a second temperature range (T5-T6) are applied to a semiconductor layer, and light that has passed through the semiconductor layer is received by a light receiving unit. An attenuation range (D4-D3) of the laser light transmissivity can be detected at a time when the temperature of the semiconductor layer is increased and the detection light quantity of the first wavelength laser light is attenuated. After the temperature is increased more and the detection light quantity of the second wavelength laser light exceeds an attenuation start point (g), the temperature of the semiconductor layer can be calculated on the basis of a detection light quantity (Db) at a certain measurement time, and the attenuation range (D4-D3). |
