| 摘要 |
<p>[Problem] The present invention relates to a film formation method which provides a high film formation speed enabling a silicon film having high crystallinity and a low defect density to be obtained with a plasma CVD technique. [Solution] A coil-shaped antenna (52) is disposed at the upper surface of a processing container (1) and high-frequency AC power is applied to the antenna (52) so that a plasma generation space is formed at an upper section in the processing container (1). An active species of helium is created by supplying helium gas from a first gas supply unit to the plasma generation space. At a section lower than the first gas supply unit, monosilane gas is discharged upwards from a second gas supply unit (4). The active species of helium is mixed with the monosilane gas, and monosilane is turned into plasma. Mixed gas containing the monosilane that has turned into the plasma is supplied to a substrate (S) for film formation treatment. Hydrogen gas is not used in the film formation treatment.</p> |
