发明名称 |
INTEGRATED CIRCUIT DEVICE HAVING DEFINED GATE SPACING AND METHOD OF DESIGNING AND FABRICATING THEREOF |
摘要 |
A device, and method of fabricating and/or designing such a device, including a first gate structure having a width (W) and a length (L) and a second gate structure separated from the first gate structure by a distance greater than: (√{square root over (W*W+L*L)})/10. The second gate structure is a next adjacent gate structure to the first gate structure. A method and apparatus for designing an integrated circuit including implementing a design rule defining the separation of gate structures is also described. In embodiments, the distance of separation is implemented for gate structures that are larger relative to other gate structures on the substrate (e.g., greater than 3 μm2). |
申请公布号 |
US2013032884(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
US201113195628 |
申请日期 |
2011.08.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC");CHUANG HAK-LAY;ZHU MING;CHEN PO-NIEN;YOUNG BAO-RU |
发明人 |
CHUANG HAK-LAY;ZHU MING;CHEN PO-NIEN;YOUNG BAO-RU |
分类号 |
H01L27/088;G06F17/50;H01L21/336 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|