[Problem] Provided is a photoelectric conversion device with a high photoelectric conversion efficiency. [Solution] A photoelectric conversion device (10) of the present invention comprises a polycrystalline light absorption layer (3) obtained by combining a plurality of particles containing group I-III-VI chalcopyrite compound semiconductors. The light absorption layer (3) further comprises oxygen. The average oxygen atomic concentration at a grain boundary of the light absorption layer (3) is larger than the average oxygen atomic concentration in the particles of the light absorption layer (3).
