摘要 |
<P>PROBLEM TO BE SOLVED: To provide a MOS-FET circuit capable of conducting to a reverse direction without using an internal diode or an external diode. <P>SOLUTION: A MOS-FET circuit comprises: a MOS-FET (10); an operational amplifier (15) in which a drain of the MOS-FET(10) is connected to a minus input of the operational amplifier (15), and a source of the MOS-FET(10) is connected to a plus input of the operational amplifier (15); and a first OR circuit (17) in which an output of the operational amplifier (15) is to be one input of the first OR circuit (17) and a gate terminal (14) is to be another input of the first OR circuit (17). An output of the first OR circuit (17) is connected to a gate of the MOS-FET (10). <P>COPYRIGHT: (C)2013,JPO&INPIT |