发明名称 LOW VF REVERSE CONDUCTING FET CIRCUIT, AND MULTIFUNCTIONAL FET CIRCUIT IC
摘要 <P>PROBLEM TO BE SOLVED: To provide a MOS-FET circuit capable of conducting to a reverse direction without using an internal diode or an external diode. <P>SOLUTION: A MOS-FET circuit comprises: a MOS-FET (10); an operational amplifier (15) in which a drain of the MOS-FET(10) is connected to a minus input of the operational amplifier (15), and a source of the MOS-FET(10) is connected to a plus input of the operational amplifier (15); and a first OR circuit (17) in which an output of the operational amplifier (15) is to be one input of the first OR circuit (17) and a gate terminal (14) is to be another input of the first OR circuit (17). An output of the first OR circuit (17) is connected to a gate of the MOS-FET (10). <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013030893(A) 申请公布日期 2013.02.07
申请号 JP20110164240 申请日期 2011.07.27
申请人 BERUNIKUSU:KK 发明人 TAZAKI MASATSUGU
分类号 H03K17/687;H02M1/08 主分类号 H03K17/687
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