| 摘要 |
<p>The purpose of the present invention is to provide a method for manufacturing a conductive material suitable for, for example, filling in a through-silicon via (TSV) for three-dimensional large-scale integrated circuit (LSI) chip mounting. Irradiating a solution containing monomers to be applied a conductive polymer, and anions, Ag+, Cu2+, and other metal ions to be applied to a conductive polymer with ultraviolet light or other light with the energy necessary to excite electrons to an energy level capable of reducing the metal ions causes a conductive polymer-metal complex to precipitate. With this configuration, it is possible to precipitate a conductor with high conductivity more quickly than by conventional methods.</p> |
