| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a III-V FET having enhanced electron supply capacity to a channel. <P>SOLUTION: A channel layer 4 of a narrow band gap material is formed on a substrate 2, and a contact layer 6 of a wide band gap material is formed on a source region on the channel layer 4. The source contact layer 6 is doped at a concentration of 1×10<SP POS="POST">19</SP>cm<SP POS="POST">-3</SP>and over. An FET 1 is constituted such that a carrier is directly injected into the undoped channel layer 4 by the source contact layer 6. <P>COPYRIGHT: (C)2013,JPO&INPIT |
