NITRIDE-BASED MEMRISTORS

摘要

A nitride-based memristor memristor includes: a first electrode comprising a first nitride material; a second electrode comprising a second nitride material; and active region positioned between the first electrode and the second electrode. The active region includes an electrically semiconducting or nominally insulating and weak ionic switching nitride phase. A method for fabricating the nitride-based memristor is also provided.