AIN BUFFER N-POLAR GaN HEMT PROFILE

摘要

An N-face GaN HEMT device including a semiconductor substrate, a buffer layer including AIN or AIGaN deposited on the substrate, a barrier layer including AIGaN or AIN deposited on the buffer layer and a GaN channel layer deposited on the barrier layer. The channel layer, the barrier layer and the buffer layer create a two- dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.