| 摘要 |
<p>Disclosed is a semiconductor device (1) having improved heat dissipation performance. The semiconductor device is formed by molding using a resin (10) with a semiconductor element (11) and one or two heat dissipating plates (12, 13) contained therein, said one or two heat dissipating plates being disposed to face one surface or both the surfaces of the semiconductor element (11). An intermediate layer (14) is formed by spraying a metal powder to the semiconductor element (11) and to one of or both of the heat dissipating plates (12, 13) using a cold spray method, and the semiconductor element (11) and the heat dissipating plate (12) are bonded together using a solder (15) with the intermediate layer (14) therebetween.</p> |
