| 摘要 |
An obstruct of this invention is to make it possible to form a metal-oxide film or a metal-nitride film having less oxygen deficit at a high deposition rate with improved repeatability and to downsize a film forming system as well. The film forming system in accordance with this invention comprises a chamber 3 inside of which a substrate 2 is held and an injection valve 4 that directly injects the liquid precursor into the chamber 3, wherein the liquid precursor is a mixed solution composed of a metallic compound and a low boiling point organic compound, and a pressure in the chamber 3 is made to be both larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution. |
