发明名称 |
Asymmetric Source-Drain Field Effect Transistor and Method of Making |
摘要 |
The present invention is related to microelectronic device technologies. A method for making an asymmetric source-drain field-effect transistor is disclosed. A unique asymmetric source-drain field-effect transistor structure is formed by changing ion implantation tilt angles to control the locations of doped regions formed by two ion implantation processes. The asymmetric source-drain field-effect transistor has structurally asymmetric source/drain regions, one of which is formed of a P-N junction while the other one being formed of a mixed junction, the mixed junction being a mixture of a Schottky junction and a P-N junction.
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申请公布号 |
US2013032881(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
US201113641086 |
申请日期 |
2011.04.19 |
申请人 |
FUDAN UNIVERSITY;PIAO YINGHUA;WU DONGPING;ZHANG SHILI |
发明人 |
PIAO YINGHUA;WU DONGPING;ZHANG SHILI |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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