发明名称 Method for driving controlled output voltage of complementary metal oxide semiconductor (CMOS) transistor, involves controlling logic circuit based on current level of output voltage, while controlling output stages and transistors
摘要 <p>A logic circuit (L) is controlled based on input voltage (Vin) and reference voltage (V0) until amplitude of voltage (VL) is reached. A transistor (M4) and output stages (A1,A2) are initially locked and logic circuit is controlled by output (G3) of transistor (M3) until amplitude of voltage (VH) is reached, while stage (A1) is blocked. A control circuit (S) controls logic circuit based on current level of output voltage (Vout), while controlling output stages and transistors (M4,M5). The output stages and transistor (M5) are locked and logic circuit is controlled by first output until amplitude of reference voltage (V0) is reached, while output stage (A2) is blocked. An independent claim is included for device for driving controlled output voltage of complementary metal oxide semiconductor (CMOS) transistor.</p>
申请公布号 DE102012002615(B3) 申请公布日期 2013.02.07
申请号 DE20121002615 申请日期 2012.02.13
申请人 TESAT-SPACECOM GMBH &amp, CO.KG 发明人 EBERLEIN, MATTHIAS
分类号 H03K19/0185;H03K19/003 主分类号 H03K19/0185
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