| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor phase growth method which allows for high quality crystal growth without causing any cracking of a substrate, even if vapor phase growth of gallium nitride is carried out at a temperature of 1000°C or higher on the surface of a plurality of substrates having a large diameter (4 inch substrate, 6 inch substrate). <P>SOLUTION: In the vapor phase growth method of gallium nitride using a susceptor for holding the substrates mentioned above, a heater for heating the counter surface of the susceptor and the substrate, a reactor consisting of a gap between the susceptor and the counter surface thereof, a material gas introduction section and a reaction gas discharge section, temperature of the substrate surface, and the temperature difference between the substrate surface and the counter surface of the substrate are set in an appropriate range, and a gallium nitride layer is formed on the substrate surface by adjusting material gas supply so that the linear velocity of material gas at a position of the substrate falls within an appropriate range. <P>COPYRIGHT: (C)2013,JPO&INPIT |
