SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided. The method includes that a tunneling dielectric layer (120), a storage medium layer (130), a gate dielectric layer (140) and a gate layer (150) are sequentially formed on a semiconductor substrate (1) of a first semiconductor material. The tunneling dielectric layer (120), the storage medium layer (130), the gate dielectric layer (140) and the gate layer (150) are patterned to form a gate stack. Grooves (103) are formed in the semiconductor substrate (1) on two sides of the gate stack. A second semiconductor material different from the first semiconductor material is filled in the grooves (103), and the whole device is covered with a dielectric layer (180). A surface energy level of a channel is subject to a stress generated by the second semiconductor material and covering the dielectric layer (180) and is changed, a tunneling current is increased, and the storing effect of the device is improved.