摘要 |
PURPOSE: A surface diffusion-induced atomic layer deposition method is provided to form a uniform atomic layer in deep pores of a carrier within a short time. CONSTITUTION: A surface diffusion-induced atomic layer deposition method comprises the steps of: providing a precursor to be chemically adsorbed on a porous carrier, supplying induction gas for surface diffusion of the precursor on the porous carrier, supplying inactivated gas for purging and discharging unadsorbed precursor, reaction byproducts, or induction gas, forming an atomic layer through reaction between the precursor and the reaction gas, and resupplying inactivated gas for purging. |