| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing ion migration caused by silver contained in material such as a filler or wire otherwise in a process, to assure a long term reliability. <P>SOLUTION: The semiconductor device comprises an adhesive layer and a bonding wire. A part of the bonding wire is embedded in the adhesive layer. An adhesive sheet, which is used for the adhesive layer, having a weight of 2.5 g is submerged in a 50 ml water solution containing silver ion by 10 ppm, and it is left out for twenty hours at 120°C. The silver ion concentration in the water solution thereafter is 0-9.9 ppm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
