| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique which achieves characteristic improvements and downsizing in a semiconductor power module. <P>SOLUTION: A first metal substrate 20 is provided, and a second metal substrate 40 is arranged parallel with the first metal substrate 20 so as to be spaced a predetermined distance away from the first metal substrate 20. A first output terminal 28a is provided between the first metal substrate 20 and the second metal substrate 40. A first power element 10a is provided between the first metal substrate 20 and the first output terminal 28a, and a first drain 44a is formed in the first output terminal 28a. A second power element 10b is provided between the second metal substrate 40 and the first output terminal 28a. Further, a second source 42b is formed in the first output terminal 28a. The first output terminal 28a electrically connects the first drain 44a with the second source 42b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
