发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of easily and surely filling a space between semiconductor elements mounted in three-dimension. <P>SOLUTION: The method of manufacturing a semiconductor device includes the steps of: preparing a semiconductor wafer in which a plurality of connecting members are formed on both surfaces; preparing a laminate film which contains a dicing sheet in which an adhesive layer is stacked on a base material, and a curing film which is stacked on the adhesive layer and has a thickness corresponding to or higher than the height of the connecting member on a first surface of the semiconductor wafer; making the curing film of the laminate film face the first surface of the semiconductor wafer and pasting the curing film to the semiconductor wafer so that the connecting member is not exposed to the adhesive layer from the curing film; and dicing the semiconductor wafer to form the semiconductor element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013030765(A) |
申请公布日期 |
2013.02.07 |
申请号 |
JP20120141059 |
申请日期 |
2012.06.22 |
申请人 |
NITTO DENKO CORP |
发明人 |
ODA TAKASHI;TAKAMOTO HISAHIDE;CHITOSE HIROYUKI |
分类号 |
H01L21/301;H01L21/60;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/301 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|