| 摘要 |
<P>PROBLEM TO BE SOLVED: To supply material gas containing component gas of an equal concentration ratio, by controlling to be a different flow rate, to a plurality of gas supply openings of a semiconductor manufacturing chamber. <P>SOLUTION: The gas supply system includes a plurality of gas supply devices 10 connected respectively to gas supply openings C. Each of the plurality of gas supply devices 10 includes: a plurality of component gas supply pipes 1 through which various types of gas flows separately; a flow rate control mechanism 4 which controls the flow rate of gas respectively that flows through the component gas supply pipes 1; and a material gas supply pipe 2 which bundles the component gas supply pipes 1. The flow control mechanism 4 includes a flow control valve V, an individual pressure sensor P, and a fluid resistance element R provided to the component gas supply pipes 1 in the order starting from an upper stream side, a common pressure sensor PC provided to the material gas supply pipe 2, and a control part 41 which calculates a gas flow rate flowing through the component gas supply pipes 1 based on a pressure measured with the individual pressure sensor P and a pressure measured with the common pressure sensor PC, and then, based on the calculated gas flow rate, controls the flow control valve V. <P>COPYRIGHT: (C)2013,JPO&INPIT |
