| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile SRAM that suppresses performance degradation and an increase in a circuit area. <P>SOLUTION: A semiconductor integrated circuit according to one embodiment of the present invention includes: a first inverter; a second inverter of which an input terminal is connected to an output terminal of the first inverter and an output terminal is connected to an input terminal of the first inverter; a first transistor of which one end is connected to a first bit line and the other end is connected to the input terminal of the first inverter; a first element group that includes a plurality of transistors disposed between the output terminal of the first inverter and a second bit line; and a second element group that includes a plurality of transistors and a magnetic resistance change element disposed between the output terminal of the second inverter and a first terminal to which a predetermined potential is applied according to operation or between the first transistor and the first terminal. <P>COPYRIGHT: (C)2013,JPO&INPIT |
