| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a junction barrier Schottky diode and a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes a semiconductor layer of first conductive type, a metal contact point which is on the semiconductor layer to form a Schottky junction part together with the semiconductor layer, and a semiconductor region in the semiconductor layer. The semiconductor region and the semiconductor layer form a first p-n junction part parallel to the Schottky junction part. The first p-n junction part is so configured as to generate a depletion region in the semiconductor layer that adjoins the Schottky junction part when the Schottky junction part is applied with a reverse vias, thereby a reverse leakage current is limited to run the Schottky junction part. The first p-n junction part is so configured that, when the Schottky junction part is applied with a reverse vias, a punch through at the first p-n junction part occurs at a voltage lower than a breakdown voltage of the Schottky junction part. <P>COPYRIGHT: (C)2013,JPO&INPIT |
