发明名称 |
PHOTOMASK MAKING METHOD, PHOTOMASK BLANK AND DRY ETCHING METHOD |
摘要 |
A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film.
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申请公布号 |
US2013034806(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
US201213647944 |
申请日期 |
2012.10.09 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
IGARASHI SHINICHI;KANEKO HIDEO;INAZUKI YUKIO;NISHIKAWA KAZUHIRO |
分类号 |
G03F1/26;G03F1/00 |
主分类号 |
G03F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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