发明名称 PHOTOMASK MAKING METHOD, PHOTOMASK BLANK AND DRY ETCHING METHOD
摘要 A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film.
申请公布号 US2013034806(A1) 申请公布日期 2013.02.07
申请号 US201213647944 申请日期 2012.10.09
申请人 SHIN-ETSU CHEMICAL CO., LTD.;SHIN-ETSU CHEMICAL CO., LTD. 发明人 IGARASHI SHINICHI;KANEKO HIDEO;INAZUKI YUKIO;NISHIKAWA KAZUHIRO
分类号 G03F1/26;G03F1/00 主分类号 G03F1/26
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