发明名称 |
Thin film transistor including a nanoconductor layer |
摘要 |
<p>A thin film transistor having a channel region including a nanoconductor layer. The nanoconductor layer can be a dispersed monolayer of nanotubes or nanowires formed of carbon. The thin film transistor generally includes a gate terminal insulated by a dielectric layer. The nanoconductor layer is placed on the dielectric layer and a layer of semiconductor material is developed over the nanoconductor layer to form the channel region of the thin film transistor. A drain terminal and a source terminal are then formed on the semiconductor layer. At low field effect levels, the operation of the thin film transistor is dominated by the semiconductor layer, which provides good leakage current performance. At high field effect levels, the charge transfer characteristics of the channel region are enhanced by the nanoconductor layer such that the effective mobility of the thin film transistor is enhanced.</p> |
申请公布号 |
EP2555247(A2) |
申请公布日期 |
2013.02.06 |
申请号 |
EP20120179013 |
申请日期 |
2012.08.02 |
申请人 |
IGNIS INNOVATION INC. |
发明人 |
CHAJI, GHOLAMREZA;MORADI, MARYAM |
分类号 |
H01L29/786;H01L29/06;H01L51/00 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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