Nonvolatile Semiconductor Memory Device and Manufacturing Method Thereof

摘要

A nonvolatile semiconductor memory device (100) comprises a substrate (102) provided with a transistor (101); a first interlayer insulating layer (103) formed over the substrate to cover the transistor; a first contact plug (104) formed in the first interlayer insulating layer and electrically connected to either of a drain electrode (101a) or a source electrode (101b) of the transistor, and a second contact plug (105) formed in the first interlayer insulating layer and electrically connected to the other of the drain electrode or the source electrode of the transistor; a resistance variable layer (106) formed to cover a portion of the first contact plug; a first wire (107) formed on the resistance variable layer; and a second wire (108) formed to cover a portion of the second contact plug; an end surface of the resistance variable layer being coplanar with an end surface of the first wire.