| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device removing a sacrifice layer without damaging a structure. <P>SOLUTION: In an SOI substrate 10 where sacrifice layer 12 is formed on a support substrate 11 and a semiconductor layer 13 is formed on the sacrifice layer 12, laser light is emitted with the sacrifice layer 12 brought into focus, the sacrifice layer 12 positioned in a sacrifice layer domain 17 including a movable part 20 including openings 15 bored through the semiconductor layer 13, a fixed part 30, and the openings 15. This makes porous the sacrifice layer 12 positioned in the layer domain 17. After making the sacrifice layer 12 porous, an etching medium is introduced thereinto from the openings 15 to remove the sacrifice layer 12 which is made porous by etching it. This causes beams 24, etc. of the movable part 20 to float relative to the support substrate 11. <P>COPYRIGHT: (C)2010,JPO&INPIT |
