| 摘要 |
A Schottky barrier diode (SBD) is provided, which improves electrical characteristics and optical characteristics by securing high crystallinity by including an n-gallium nitride (GaN) layer (300) and a GaN layer (400) which are doped with aluminum (Al). In addition, by providing a p-GaN layer (500) on the Al-doped GaN layer (400), a depletion layer may be formed when a reverse current is applied, thereby reducing a leakage current. The SBD may be manufactured by etching a part of the Al-doped GaN layer (400) and growing a p-GaN layer (500) from the etched part of the Al-doped GaN layer (400). Therefore, a thin film crystal is not damaged, thereby increasing reliability. Also, since dedicated processes for ion implantation and thermal processing are not necessary, simplified process and reduced cost may be achieved.
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