发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To reduce the destruction of a load transistor(TR), by providing a TR acting as a protective element between an inverter circuit and a power supply and setting the conduction of the TR through the connection of the gate of the TR to the power supply. CONSTITUTION:A depletion TRTD2 is provided between a power supply Vcc and a depletion TRTD1. When the high level of an input signal is increased, the TRs TD2 and TD1 form a ratio circuit between the power supply Vcc and an output terminal and a connecting point A of the TRs goes to an intermediate level between the Vcc and a Vss. Since the Vcc is not applied to the drain of the TRTD1, the load can be reduced. Since the gate and drain of the TRTD2 are at the same potential, where noise is possibly applied, the electrostatic destruction of the TRTD2 is less.
申请公布号 JPS5869124(A) 申请公布日期 1983.04.25
申请号 JP19810167556 申请日期 1981.10.20
申请人 TOKYO SHIBAURA DENKI KK 发明人 ARIIZUMI SHIYOUJI;SEGAWA MAKOTO
分类号 H03K19/0944;H01L27/02;H01L27/088;H02H9/04;H03K19/003 主分类号 H03K19/0944
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