MONOLITHIC STATIC MEMORY CELL

摘要

A monolithic static memory cell has a region of a first conductivity type extending from the upper surface of a semiconductor layer of a second conductivity type carried on a semiconductor body of the first conductivity type and connected to a first drive line. A first zone of the semiconductor layer adjacent the region is covered by a gate connected to a second drive line and separated from the semiconductor layer by a gate insulator. A second zone adjacent the first zone is covered by a conductive coating connected to a supply terminal, the conductive coating being separated from the surface of the semiconductor layer by a thin electrically insulating layer which admits a tunnel current between the surface of the semiconductor layer and the conductive coating.