| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME |
| 摘要 |
<p>A semiconductor device (1) includes: a substrate (2) made of silicon carbide and having a main surface (2A) having an off angle of not less than -3° and not more than +5° relative to a (0-33-8) plane in a <01-10> direction; a p type layer (4) made of silicon carbide and formed on the main surface (2A) of the substrate (2) by means of epitaxial growth; and an oxide film (8) formed in contact with a surface of the p type layer (4). A maximum value of nitrogen atom concentration is 1 × 10 21 cm -3 or greater in a region within 10 nm from an interface between the p type layer (4) and the oxide film (8).</p> |
| 申请公布号 |
EP2555246(A1) |
申请公布日期 |
2013.02.06 |
| 申请号 |
EP20100848493 |
申请日期 |
2010.12.17 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HARADA, SHIN;HIYOSHI, TORU;WADA, KEIJI;MASUDA,TAKEYOSHI |
| 分类号 |
H01L29/78;H01L21/04;H01L21/20;H01L21/318;H01L21/336;H01L29/04;H01L29/12;H01L29/51;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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