| 摘要 |
<p>PURPOSE: A light emitting diode chip having wavelength converting layer, a method of fabricating the same and a package having the same are provided to prevent the loss of a fluorescent substance due to light radiated from a semiconductor lamination structure by selecting a spacer. CONSTITUTION: In a gallium nitride-based semiconductor laminated structure(30) is formed in a substrate. The gallium nitride-based semiconductor laminated structure is formed on a substrate(21). The semiconductor laminate structure comprises a first conductive semiconductor layer(25), an active layer(27), and a second conductive semiconductor layer(29). A first electrode(41) electrically connects to the first conductive semiconductor layer. A second electrode(42) electrically connects to the second conductive semiconductor layer. A first add electrode and a second add electrode are formed in the first electrode and the second electrode respectively.</p> |
