CHARGE TRAP FLASH TYPE NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A charge trap type non-volatile memory device is provided to improve data storage and writing/erasing characteristic by using a nonvolatile memory having a trench structure. CONSTITUTION: A first tunneling insulating layer(32) which has silicon oxide film having the thickness of 3±0.1nm is formed on a trench channel. A second tunneling insulating layer(33) which has zirconium oxide film having the thickness of 2±0.1nm is formed with the oxide of thickness. A charge trapping layer(34) is formed on the second tunneling insulating layer. A blocking insulation layer(35) is formed on the charge trapping layer. A metal gate electrode(36) is formed on the blocking insulation layer.