发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT HAVING CAPACITOR FOR PROVIDING STABLE POWER AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor integrated circuit device and a manufacturing method thereof including a mass storage capacitor for stably supplying power are provided to form a mass storage capacitor and a MOS capacitor without an additional process. CONSTITUTION: A mass storage capacitor(100) includes a dummy cell capacitor group(110) and a MOS capacitor(120). The dummy cell capacitor group includes multiple dummy capacitors(C1,C2,Cn) which are connected in parallel between a dummy plate electrode(P) and a dummy storage node contact part(SNC). The dummy plate electrode and the dummy storage node contact part are positioned in a peripheral circuit region. The gate(G) of a MOS capacitor is electrically connected to the dummy storage node contact part. The active area(A) of the MOS capacitor is electrically connected to the dummy plate electrode.
申请公布号 KR20130013065(A) 申请公布日期 2013.02.06
申请号 KR20110074469 申请日期 2011.07.27
申请人 SK HYNIX INC. 发明人 KIM, JONG SU
分类号 H01L27/108;H01L21/8242;H01L27/02 主分类号 H01L27/108
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