摘要 |
PURPOSE: A semiconductor integrated circuit device and a manufacturing method thereof including a mass storage capacitor for stably supplying power are provided to form a mass storage capacitor and a MOS capacitor without an additional process. CONSTITUTION: A mass storage capacitor(100) includes a dummy cell capacitor group(110) and a MOS capacitor(120). The dummy cell capacitor group includes multiple dummy capacitors(C1,C2,Cn) which are connected in parallel between a dummy plate electrode(P) and a dummy storage node contact part(SNC). The dummy plate electrode and the dummy storage node contact part are positioned in a peripheral circuit region. The gate(G) of a MOS capacitor is electrically connected to the dummy storage node contact part. The active area(A) of the MOS capacitor is electrically connected to the dummy plate electrode.
|