发明名称 |
ERROR CORRECTION CIRCUIT, NONVOLATILE MEMORY DEVICE THEREOF AND DRIVING METHOD THEREOF |
摘要 |
PURPOSE: An error correcting circuit, a nonvolatile memory device including the same, and a driving method thereof are provided to minimize size by asymmetrically arranging an encoder and a decoder. CONSTITUTION: An encoder(110) receives message data and generates a parity bit to correct a bit error. A decoder(220) receives message data and the parity bit and produces an error location of the message data. The message data is inputted to the encoder with n bits in parallel. The message data is inputted to the decoder with m bits in parallel, where n is different from m. |
申请公布号 |
KR20130013638(A) |
申请公布日期 |
2013.02.06 |
申请号 |
KR20110075367 |
申请日期 |
2011.07.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, SEONG HYUN;CHUNG, HOI JU;KIM, SEO HEE;KIM, SUNG HOON |
分类号 |
G11C29/42;G11C16/06 |
主分类号 |
G11C29/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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