发明名称 ERROR CORRECTION CIRCUIT, NONVOLATILE MEMORY DEVICE THEREOF AND DRIVING METHOD THEREOF
摘要 PURPOSE: An error correcting circuit, a nonvolatile memory device including the same, and a driving method thereof are provided to minimize size by asymmetrically arranging an encoder and a decoder. CONSTITUTION: An encoder(110) receives message data and generates a parity bit to correct a bit error. A decoder(220) receives message data and the parity bit and produces an error location of the message data. The message data is inputted to the encoder with n bits in parallel. The message data is inputted to the decoder with m bits in parallel, where n is different from m.
申请公布号 KR20130013638(A) 申请公布日期 2013.02.06
申请号 KR20110075367 申请日期 2011.07.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON, SEONG HYUN;CHUNG, HOI JU;KIM, SEO HEE;KIM, SUNG HOON
分类号 G11C29/42;G11C16/06 主分类号 G11C29/42
代理机构 代理人
主权项
地址