发明名称 |
RAW MATERIAL FOR GROWTH OF INGOT, METHOD FOR THE SAME AND METHOD FOR INGOT |
摘要 |
<p>PURPOSE: A raw material for growing an ingot and a method for manufacturing the raw material for growing the ingot and a method for manufacturing the ingot are provided to minimize dust and to improve the yield of the ingot. CONSTITUTION: The raw material for growing an ingot includes fine particles(10). The fine particles include silicon carbide powder. The fine particles are agglomerative. The purity of the fine particles is 99.9% or over. The diameter(R) of the agglomerative raw material is 100 to 1000um.</p> |
申请公布号 |
KR20130013703(A) |
申请公布日期 |
2013.02.06 |
申请号 |
KR20110075467 |
申请日期 |
2011.07.28 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
KIM, BUM SUP;MIN, KYOUNG SEOK |
分类号 |
C30B23/00;C01B31/36;C30B29/36 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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