发明名称 RAW MATERIAL FOR GROWTH OF INGOT, METHOD FOR THE SAME AND METHOD FOR INGOT
摘要 <p>PURPOSE: A raw material for growing an ingot and a method for manufacturing the raw material for growing the ingot and a method for manufacturing the ingot are provided to minimize dust and to improve the yield of the ingot. CONSTITUTION: The raw material for growing an ingot includes fine particles(10). The fine particles include silicon carbide powder. The fine particles are agglomerative. The purity of the fine particles is 99.9% or over. The diameter(R) of the agglomerative raw material is 100 to 1000um.</p>
申请公布号 KR20130013703(A) 申请公布日期 2013.02.06
申请号 KR20110075467 申请日期 2011.07.28
申请人 LG INNOTEK CO., LTD. 发明人 KIM, BUM SUP;MIN, KYOUNG SEOK
分类号 C30B23/00;C01B31/36;C30B29/36 主分类号 C30B23/00
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