| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having low driving voltage and high luminous efficiency, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor light-emitting element comprises: an n-type layer composed of a nitride semiconductor; a p-type layer composed of a nitride semiconductor; and a light-emitting portion which is provided between the n-type layer and the p-type layer, has a plurality of barrier layers composed of a nitride semiconductor and has well layers that are provided between each of the plurality of barrier layers, have a smaller band gap than the barrier layers, and are composed of a nitride semiconductor. At least any of the barrier layers include a first layer provided at the n-type layer side and a second layer that is provided at the p-type layer side and includes an n-type impurity with a higher concentration than the first layer. At least any of the well layers include a third layer provided at the n-type layer side and a fourth layer that is provided at the p-type layer side and includes the n-type impurity with a higher concentration than the third layer. The n-type impurity concentration of the second layer and the fourth layer is more than or equal to 5×10<SP POS="POST">17</SP>cm<SP POS="POST">-3</SP>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
