NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

A nitride-based semiconductor device of the present invention includes: a semiconductor multilayer structure 20 including a p-type GaN-based semiconductor region whose surface 12 is inclined by an angle of not less than 1° and not more than 5°; and an electrode 30 that is provided on the p-type semiconductor region. The p-type semiconductor region is made of an Al x In y Ga z N (where x+y+z=1, x‰¥0, y‰¥0, and z‰¥0) layer 26. The electrode 30 includes a Zn layer 32, and the Zn layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20.