发明名称 |
MAGNETIC TUNNEL JUNCTION STORAGE ELEMENT AND METHOD OF FABRICATING THE SAME |
摘要 |
Methods for forming a magnetic tunnel junction (MTJ) storage element and MTJ storage elements formed are disclosed. The MTJ storage element includes a MTJ stack having a pinned layer stack, a barrier layer and a free layer. An adjusting layer is formed on the free layer, such that the free layer is protected from process related damages. A top electrode is formed on the adjusting layer and the adjusting layer and the free layer are etched utilizing the top electrode as a mask. A spacer layer is then formed, encapsulating the top electrode, the adjusting layer and the free layer. The spacer layer and the remaining portions of the MTJ stack are etched. A protective covering layer is deposited over the spacer layer and the MTJ stack. |
申请公布号 |
EP2553742(A1) |
申请公布日期 |
2013.02.06 |
申请号 |
EP20110712737 |
申请日期 |
2011.03.25 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
CHEN, WEI-CHUAN;KANG, SEUNG H. |
分类号 |
H01L43/08;H01L27/22;H01L43/12 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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