RESISTANCE VARIABLE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A variable resistance memory device and a manufacturing method thereof are provided to improve a switching characteristic by controlling a conductivity filament within a variable resistance material layer. CONSTITUTION: A conductive film for a first electrode is formed on a substrate. A nanowire(12) made of variable resistance material is formed on the conductive film. An insulating layer(13) covering the nanowire is formed on the conductive film. Part of the insulating layer is removed to expose the nanowire. A conductive film for a second electrode is formed on the insulating layer.