| 摘要 |
PURPOSE: An electrostatic preventing circuit is provided to minimize the size of a silicon area necessary for implementing the electrostatic preventing circuit, by not separating a fourth diffusion region from a third diffusion region. CONSTITUTION: A first type first well(220) and a second well(221) are arranged in a certain region of a substrate(210). A second type first diffusion region(231) and a first type second diffusion region(232) are formed in the first well. A first type third diffusion region(233) is arranged in the region which includes the boundary surface of the substrate and the first well. An insulating layer(250) and a conductor(251) are laminated between the second diffusion region and the third diffusion region, while touching the first well. A second type fourth diffusion region(234) is arranged between the first well and the second well. [Reference numerals] (210) P-type substrate
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