FORMING METHOD FOR WIRING OF COMPLEMENTARY MOS TRANSISTOR,申请号JP19850218360-传众专利搜索

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发明名称	FORMING METHOD FOR WIRING OF COMPLEMENTARY MOS TRANSISTOR
摘要
申请公布号	JPS6278871(A)	申请公布日期	1987.04.11
申请号	JP19850218360	申请日期	1985.09.30
申请人	NEC CORP	发明人	SEKIYA KIYOUZOU
分类号	H01L21/8238;H01L21/3205;H01L21/336;H01L21/8234;H01L23/52;H01L27/08;H01L27/088;H01L27/092;H01L29/78	主分类号	H01L21/8238
代理机构		代理人
主权项
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