| 摘要 |
PURPOSE:To prevent the alloying of gold and aluminum, and to obtain a device with a wiring layer having high reliability by constituting an electrode of gold or a gold group alloy and the wiring layer of multilayer metallic films containing a tungsten layer and an aluminum layer and interposing the tungsten layer between the electrode and the aluminum layer. CONSTITUTION:Electrodes 2 are organized of gold or a gold group alloy, and a wiring layer is formed of multilayer metallic films including a tungsten layer 6 and an aluminum layer 4 in succession from the electrode 2 side. The electrodes 2 composed of a gold-germanium alloy are shaped onto a semi- insulating gallium arsenide substrate 1 as the structure of a wiring section for a semiconductor integrated circuit such as a compound semiconductor integrated circuit, and a multilayer interconnection layer formed in order of titanium 5/tungsten 6/aluminum 4 from the substrate side is shaped as a wiring layer connected to the electrodes 2. Accordingly, the alloying reaction of gold and aluminum can be prevented, thus acquiring the semiconductor integrated circuit having high reliability.
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