Method of making a planar MOS device in polysilicon

摘要

A highly planarized integrated circuit structure having at least one MOS device is described as well as a method of making the structure. The structure comprises a substrate having a field oxide grown thereon with at least one portion defined therein for formation of a source/gate/drain region for an MOS device. All of the contacts of the device are formed using polysilicon which fills the defined portions in the field oxide resulting in the highly planarized structure.