| 摘要 |
<p>PURPOSE:To improve a manufacturing yield rate, by providing a semiconductor device, in which a substrate comprises a light transmitting glass substrate and a second electrode comprises a light shielding metal electrode. CONSTITUTION:This device is composed of the following parts: a second electrode comprising a light transmitting conductor film 1 on a glass substrate 20; an N-I-N junction type composite diode 10 comprising a laminated body of N-11, N-12 and N-13 semiconductors; and a second electrode 2 comprising a light shielding chromium mask 14 and an aluminum conductor 15. Namely, on a insulating substrate, typically a glass substrate 20, the light transmitting conductor film 1 comprising tin oxide, ITO or the like is formed by using a first photo-mask 1'. Then a plasma CVD method and an optical CVD method are used on the upper surface of the film 1. Then phosphine as N-type impurities is added to silane. Thus the first N-type semiconductor layer 11 is formed. The I-type semiconductor layer 12 is formed with only silane. Then N-type impurities are added in silane, and the N-type semiconductor 13 is formed. These layers are sequentially laminated, and the diode 10 is formed. The chromium 14 is formed so as to shield light and to prevent reaction between the aluminum and the semiconductors. Then the aluminum 15 is formed.</p> |
