发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the current supply capability on the multilayer wiring of a semiconductor service as well as to contrive improvement in reliability by flattening the multilayer wiring by a method wherein a power source layer and a ground layer are formed into a large plane surface. CONSTITUTION:On the substrate 1a which functions as the first insulating layer, a ground layer 10 to be used to supply reference potential which is the grounding potential of a circuit, for example, is formed in deposition almost over the whole surface of the substrate 1. Then, a power source layer 12, to be used to supply power source potential to a pellet 3 through the second insulating layer 11, is formed almost over the whole surface of the substrate 1a. A power source wiring layer is formed with said two layers 10 and 11. A signal wiring layer 13 is formed on the power source layer 12 through the third insulating layer 11a. A number of signal wiring layers, consisting of the prescribed pattern, are formed by lamination.
申请公布号 JPS62169459(A) 申请公布日期 1987.07.25
申请号 JP19860010078 申请日期 1986.01.22
申请人 HITACHI LTD 发明人 YAMADA TAKEO;OKUYA KEN;OTSUKA KANJI
分类号 H01L23/52;H01L23/538 主分类号 H01L23/52
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