| 摘要 |
PURPOSE: A method and an apparatus for growing a single crystal sapphire are provided to improve the quality of a grown single crystal by increasing a cooling surface of the lower side of a crucible. CONSTITUTION: A crucible(20) is located in a furnace(10). A heating element(30) is arranged outside the crucible to melt a sapphire scrap and comprises a pair of lateral heating elements connected to an electrode and a connection heating element. The connection heating element connects the lateral heating elements. A cooling unit is arranged in the bottom of the crucible to prevent the complete melting of a seed crystal(51). |
