Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors

摘要

Disclosed is a method of manufacturing an integrated circuit comprising a plurality of bipolar transistors including a first type bipolar transistor and a second type bipolar transistor, the method comprising providing a substrate (10) comprising a plurality of first isolation regions (12) each separated from a second isolation region by an active region (11) comprising a collector impurity of one of said bipolar transistors; forming a base layer stack (14) over said substrate; forming a first emitter cap layer (14') of a first effective thickness over the base layer stack in the areas of the first type bipolar transistor; forming a second emitter cap layer (14') of a second effective thickness different to the first effective thickness over the base layer stack in the areas of the second type bipolar transistor; and forming an emitter (24) over the emitter cap layer of each of said bipolar transistors. An IC manufactured in accordance with this method is also disclosed.