发明名称 |
Plasma cleaning method and plasma CVD method |
摘要 |
A plasma cleaning method is performed in a plasma CVD apparatus for depositing a silicon nitride film on a surface of a target substrate, and includes a stage (S1) of supplying a cleaning gas containing NF3 gas into a process container, thereby removing extraneous deposits formed on portions inside the process container; a stage (S2) of supplying a gas containing hydrogen gas into the process container and generating plasma thereof, thereby removing residual fluorine inside the process container; and a stage (S3) of supplying a gas containing a rare gas into the process container and generating plasma thereof, thereby removing residual hydrogen inside the process container.
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申请公布号 |
US8366953(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20070441828 |
申请日期 |
2007.09.18 |
申请人 |
TOKYO ELECTRON LIMITED;KOHNO MASAYUKI;NISHITA TATSUO;NAKANISHI TOSHIO |
发明人 |
KOHNO MASAYUKI;NISHITA TATSUO;NAKANISHI TOSHIO |
分类号 |
B44C1/22;C03C15/00;G01L21/30;G01R31/00;H01L21/302;H01L21/461 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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